Apart From crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. Identification of stacking faults in silicon carbide by polarization-solved second harmonic generation microscopy. The CoolSiC�?MOSFET body diode is rated for hard commutation which is highly https://www.quora.com/profile/Trevor-Flatcher-2/Advantages-of-Silicon-Carbide-Materials-in-High-Temperature-Electronic-Devices-Silicon-carbide-SiC-has-emerged-as-a-c